參數(shù)資料
型號(hào): CLX34-10
廠商: INFINEON TECHNOLOGIES AG
英文描述: HiRel X-Band GaAs Power-MESFET
中文描述: 伊雷爾X波段砷化鎵功率場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 636K
代理商: CLX34-10
CLX34
S emiconductor Group
2 of 10
Draft D, S eptember 99
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
11
V
Drain-gate voltage
V
DG
13
V
Gate-source voltage
V
GS
- 6
V
Drain current
I
D
2000
mA
Gate forward current
I
G
10
mA
Compression Level
Operation Range 1
1)
P
C
1.5 at V
DS
8 V
2.5 at V
DS
7 V
3.5 at V
DS
6 V
dB
Compression Level
Operation Range 2
2)
P
C
3.5 at V
DS
6 V
dB
Compression Level
Operation Range 3
3)
P
C
tbd.
dB
J unction temperature
T
J
175
°
C
Storage temperature range
T
stg
- 65...+ 175
°
C
Total power dissipation
4)
P
tot
5.4
W
Soldering temperature
5)
T
sol
230
°C
Thermal Resistance
J unction-soldering point
R
th J S
20
K/W
Notes.:
1) Operation Range 1: 400 mA
I
D
800 mA
2) Operation Range 2: I
D
> 800 mA
3) Operation Range 3: I
D
< 400 mA
4) At T
S
= + 40 °C. For T
S
> + 40 °C derating is required.
5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
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