參數(shù)資料
型號(hào): CLX34-00
廠商: INFINEON TECHNOLOGIES AG
英文描述: HiRel X-Band GaAs Power-MESFET
中文描述: 伊雷爾X波段砷化鎵功率場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 636K
代理商: CLX34-00
CLX34
S emiconductor Group
3 of 10
Draft D, S eptember 99
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
V
DS
= 2 V, V
GS
= 0 V
I
Dss
900
1500
2000
mA
Gate threshold voltage
V
DS
= 3 V, I
D
= 60 mA
-V
Gth
1.2
2.2
3.2
V
Drain current at pinch-off, low V
DS
V
DS
= 3 V, V
GS
= -3.5 V
I
Dp3
-
-
400
μA
Gate current at pinch-off, low V
DS
V
DS
= 3 V, V
GS
= -3.5 V
-I
Gp3
-
-
120
μA
Drain current at pinch-off, high V
DS
V
DS
= 9.5 V, V
GS
= -3.5 V
I
Dp9.5
-
-
3000
μA
Gate current at pinch-off, high V
DS
V
DS
= 9.5 V, V
GS
= -3.5 V
-I
Gp9.5
-
-
1200
μA
Transconductance
V
DS
= 3 V, I
D
= 600 mA
g
m
660
780
-
mS
Thermal resistance
J unction to soldering point
V
DS
= 8 V, I
D
= 600 mA, T
s
= +25°C
R
th J S
-
16
-
K/W
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