參數(shù)資料
型號(hào): CLC5509
廠商: National Semiconductor Corporation
英文描述: Ultra-Low Noise Preamplifier
中文描述: 超低噪聲前置放大器
文件頁數(shù): 3/11頁
文件大?。?/td> 445K
代理商: CLC5509
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Output Current
±
5.5V
70mA
Common-Mode Input Voltage
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering 10 sec)
ESD Rating (human body model)
±
V
CC
+150C
65C to +150C
+300C
4000V
Electrical Characteristics
(Note 3)
(V
CC
, V
EE
=
±
5V, R
S
= 50
, A
V
= 10V/V, R
g
= 1k
, R
L
= 100
; unless specified)
Symbol
Parameter
Conditions
Typ
Min/Max
Ratings
(Note 2)
+25C
Units
Ambient Temperature
Frequency Domain Response
-3dB Bandwidth
High Cutoff
CLC5509
+25C
V
O
<
2.0V
PP
3dB
33
28
45
0.4
0.7
MHz
Low Cutoff
3dB
0.5
MHz
Gain Flatness Inband
2
<
12.5MHz, V
O
<
1.0V
PP
1.5
+.1
dB
Gain Accuracy
@
5MHz
Phase Variation
Gain Variation
±
0.3
dB
Deg
dB
3
<
9MHz, V
O
<
.1V
PP
3
<
9MHz, V
O
<
.1V
PP
1
.3
Time Domain Response
Rise and Fall Time
2V step
10
10
15
ns
Settling Time to 0.2%
Overshoot
Group Delay
2V step
2V step
2.5MHz
<
10MHz, V
IN
= 10mV
PP
1
0
μs
%
ns
5
3
5.5
7.5
Group Delay Repeatability
Distortion And Noise Response
2nd Harmonic Distortion
3rd Harmonic Distortion
Intermodulation Distortion
Equivalent Input Noise Voltage (e
ni
)
.5
ns
<
12.5MHz, V
IN
= 100mV
PP
51
56
65
0.7
dBc
dBc
dBc
nV
@
5MHz
>
1MHz, R
S
= 50
0.78
Noise Figure
Optimum R
S
@
50
2
85
2.4
80
110
dB
Static, DC Performance
PSRR (preamp only)
Supply Current (preamp only)
Miscellaneous Performance
Output Impedance
<
1MHz
R
L
=
40
9
dB
mA
11
DC
<
12MHz
0.2
0.2
1
±
1.7
±
35
Output Voltage Range
Output Current
R
L
= 100
±
2
±
45
V
mA
C
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