參數(shù)資料
型號(hào): CLC001
廠商: National Semiconductor Corporation
英文描述: Serial Digital Cable Driver with Adjustable Outputs
中文描述: 串行數(shù)字電纜驅(qū)動(dòng)器,帶有可調(diào)輸出
文件頁數(shù): 2/10頁
文件大小: 155K
代理商: CLC001
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please
contact
the
National
Office/Distributors for availability and specifications.
Semiconductor
Sales
Supply Voltage
Output Current
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature
(Soldering 10 seconds)
4V
27 mA
+125C
65C to +150C
+300C
ESD Rating (HBM)
ESD Rating (MM)
Package Thermal Resistance
θ
JA
Surface Mount AJE
θ
JC
Surface Mount AJE
Reliability Information
Transistor count
7 kV
500V
125C/W
105C/W
291
Recommended Operating
Conditions
Supply Voltage Range (V
DD
- V
SS
)
Operating Free Air Temperature (T
A
)
R
Range (applied to V
BB
input)
(Note 6)
+3.0V to +3.6V
-40C to +85C
1.3k
to 11.5k
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified (Notes 2 and 3)
Symbol
Parameter
OUTPUT DC SPECIFICATIONS
V
SDO
Serial Driver Output Voltage
R
L
= 75
1%,
R
REF
= 1.91 k
1% (for 800 mV
p-p
),
Figure 1
R
L
= 75
1%,
R
REF
= 1.5 k
1% (for 1.0 V
p-p
),
Figure 1
INPUT DC SPECIFICATIONS
V
TH
Differential Input High Threshold
V
CM
= +0.05V or +1.2V or +3.25V,
V
TL
Differential Input Low Threshold
V
DD
= 3.3V
V
CMR
Common Mode Voltage Range
V
ID
= 100mV, V
DD
= 3.3V
I
IN
Input Current
V
IN
= 0V or +3.0V, V
DD
= 3.6V or 0V
I
INB
Input Current Balance
V
IN
= 0V or +3.0V, V
DD
= 3.6V or 0V,
(Note 8)
SUPPLY CURRENT
I
DD
Total Dynamic Power Supply Current
(includes load current)
R
REF
= 1.91 k
1%
(V
SDO
= 800 mV
p-p
@
270 Mbps)
R
L
= 75
,
R
REF
= 1.5 k
1%
(V
SDO
= 1.0 V
p-p
@
622 Mbps)
MISCELLANEOUS PARAMETERS
L
GEN
Output Inductance
R
GEN
Output Resistance
I
BB
V
BB
Current
R
REF
= 1.91 k
1%, (Note 6)
R
REF
= 1.5 k
1%, (Note 6)
Conditions
Min
Typ
Max
Units
720
800
880
mV
900
1000
1100
mV
0
0
+100
mV
mV
V
μA
μA
100
0.05
3.25
±
10
±
1
0.23
R
L
= 75
,
70
115
mA
85
130
mA
6
nH
k
μA
μA
25
250
315
C
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