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參數(shù)資料
| 型號： | CJF6388 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR |
| 中文描述： | NPN硅平面達(dá)林頓功率晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 298K |
| 代理商： | CJF6388 |
NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR
CJF6388
TO-220FP Fully Isolated
Plastic Package
ELECTRICAL CHARACTERISTICS (T
c
=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Collector Emitter sustaining Voltage
Collector Cut off Current
V
CEO (sus)
*
I
CEO
I
CEX
I
C
=30mA, I
B
=0
V
CE
=80V, I
B=
0
V
CE
=100V, V
EB
(off)=1.5V
100
V
μ
A
μ
A
10
10
T
C
=125oC
V
CE
=100V, V
EB
(off)=1.5V
V
CB
=100V, I
E=
0
V
EB
=5V, I
C
=0
I
C
=3A, V
CE
=4V
I
C
=5A, V
CE
=3V
I
C
=8A, V
CE
=4V
I
C
=10A, V
CE
=3V
I
C
=3A, I
B
=6mA
I
C
=5A, I
B
=0.01A
I
C
=8A, I
B
=80mA
I
C
=10A, I
B
=0.1A
I
C
=5A, I
B
=0.01A
I
C
=10A, I
B
=0.1A
I
C
=8A, V
CE
=4V
3
mA
μ
A
mA
I
CBO
I
EBO
h
FE
*
10
2
Emitter Cut off Current
DC Current Gain
3000
1000
200
100
15000
Collector Emitter Saturation Voltage
V
CE(Sat)
*
2
2
V
V
V
V
V
V
V
2.5
3
2.8
4.5
2.5
Base Emitter Saturation Voltage
V
BE(Sat)
*
Base Emitter on Voltage
V
BE(on)
*
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
Output Capacitance
Small Signal Current Gain
* Pulse Test: Pulse Width <300
μ
s, Duty Cycle <2 %
Ih
fe
I
C
ob
h
fe
I
C
=1A, V
CE
=5V, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=1A,V
CE
=5V, f=1kHz
20
200
pF
1000
Continental Device India Limited
Data Sheet
Page 2 of 4
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