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參數(shù)資料
| 型號(hào)： | CJF6107 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 172K |
| 代理商： | CJF6107 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR POWER TRANSISTOR
CJF6107
TO-220FP Fully Isolated
Plastic Package
General Purpose Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Base Voltage
VCBO
80
V
Collector Emitter Voltage
VCEO
70
V
Emitter Base Voltage
VEBO
5V
RMS Isolation Voltage ( for 1sec,R.H.
(1) VISOL (a)
3500
VRMS
<30%, TA=25C )
(b)
1500
VRMS
Collector Current - Continuous
IC
7A
Peak
10
A
Base Current
IB
3A
Total Power Dissipation @ Tc=25C
PD**
34
W
Derate Above 25C
0.27
W/C
Total Power Dissipation @ Ta=25C
PD
2W
Derate Above 25C
0.016
W/C
Operating and Storage Junction
Tj,Tstg
- 65 to +150
C
Temperature Range
THERMAL RESISTANCE
From Junction to Case
Rth (j-c)**
3.7
C/W
From Junction to Ambient
Rth (j-a)
62.5
C/W
Lead Temperature for Soldering Purpose
TL
260
C
**Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location
beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs.
(1) RMS Isolation Voltage : (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package
in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25C; Pulse Test: Pulse Width <300
s, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T
c=25C unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Collector Emitter sustaining Voltage
VCEO (sus) *IC=100mA, IB=0
70
V
Collector Cut off Current
ICES
VCE=80V, IB=0
1
A
ICEX
VCE=80V, VEB(off)=1.5V
1
A
Emitter Cut off Current
IEBO
VEB=5V, IC=0
1
A
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 4
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