K2611 東芝場(chǎng)效應(yīng)管

K2611原裝現(xiàn)貨。         
日本TOSHIBA MOS 2SK2611 K2611 9A/900V N溝道，2SK2611 K2611功率MOSFET主要用于DC- DC轉(zhuǎn)換器，繼電器驅(qū)動(dòng)器和電機(jī)驅(qū)動(dòng)器。
 

2SK2611 K2611 TOSHIBA MOS特點(diǎn)：  
 
極性: N溝
 
漏源電壓V_DSS:900 V
 
漏電流I_D：9 A
 
漏功耗P_D：150 W
 
門電荷總數(shù)Q_g(nC) (標(biāo)準(zhǔn))：58
 
漏源導(dǎo)通電阻R_DS(ON)(最大) @V_GS=10V：1.4 Ω
 
低漏源電阻：R_{DS (ON)}= 1.2 Ω (typ.)
 
高正向傳輸導(dǎo)納：|Y_fs| = 7.0 S (typ.)
 
低漏電流：I_DSS= 100 μA (max) (V_DS= 720 V)
增強(qiáng)模式：V_th= 2.0 to 4.0 V (V_DS= 10 V, I_D= 1 mA)
 
封裝：TO-3P(N)
 
 
 
2SK2611 K2611 TOSHIBA MOS絕對(duì)最大額定值：（Ta= 25℃）
 

Characteristics		Symbol	Rating	Unit
Drain?source voltage		VDSS	900	V
Drain?gate voltage (RGS= 20 kΩ)		VDGR	900	V
Gate?source voltage		VGSS	±30	V
Drain current	DC (Note 1)	ID	9	A
	Pulse (Note 1)	IDP	27	A
Drain power dissipation (Tc = 25°C)		PD	150	W
Single pulse avalanche energy (Note 2)		EAS	663	mJ
Avalanche current		IAR	9	A
Repetitive avalanche energy (Note 3)		EAR	15	mJ
Channel temperature		Tch	150	°C
Storage temperature range		Tstg	?55 to 150	°C