參數(shù)資料
型號： CHA5390
廠商： United Monolithic Semiconductors
英文描述： 24-30GHz Medium Power Amplifier
中文描述： 24 - 30GHz的中等功率放大器
文件頁數(shù)： 2/8頁
文件大?。?/td> 177K
代理商： CHA5390
24-30GHz Medium Power Amplifier
CHA5390
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 5V Id=460mA
Symbol
Parameter
Ref. : CHA53901012 - 12-Jan.-01
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Min
Typ
Max
Unit
Fop
Operating frequency range
24
30
GHz
G
Small signal gain (1)
21 (2)
24 (2)
dB
G
Small signal gain flatness (1)
±2
dB
Is
Reverse isolation
50
dB
P1dB
Pulsed output power at 1dB compression (1)
24
25
dBm
IP3
3
rd
order intercept point
33
dBm
PAE
Power added efficiency at saturation
16
%
VSWRin
Input VSWR
3.0:1
VSWRout Output VSWR
3.0:1
Id
Bias current
460
720
mA
(1) On Wafer measurements
(2) [26-29 GHz]: 24dB min [24-31 GHz]: 21dB min
For Tj<175°C ( 80°C ambient ), Id should be below 475mA under 5V bias.
Current source biasing network is recommended.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6.0
V
Id
Drain bias current
720
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
-55 to +155
°C
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