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參數(shù)資料
| 型號(hào)： | CHA5296 |
| 廠商： | United Monolithic Semiconductors |
| 英文描述： | 27-30GHz High Power Amplifier |
| 中文描述： | 27 - 30GHz的高功率放大器 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 180K |
| 代理商： | CHA5296 |
CHA5296
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #900mA
Symbol
27-30GHz High Power Amplifier
Ref. : DSCHA52962147 - 27-May-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
27
30
GHz
G
Small signal gain (1)
14
15
dB
G
Small signal gain flatness (1)
±
1
dB
Is
Reverse isolation
50
dB
P1dB
Pulsed output power at 1dB compression (1)
28
29
dBm
P03
Output power at 3dB gain compression (1)
29
30
dBm
IP3
3
rd
order intercept point (2)
41
dBm
PAE
Power added efficiency at Psat
12
16
%
VSWRin
Input VSWR (2)
5:1
VSWRout Output VSWR (2)
2.5:1
Tj
Junction temperature for 80°C backside
170
°C
Id
Bias current @ small signal
850
1000
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6.25
V
Id
Drain bias current
1450
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vgd
Negative gate drain voltage ( = Vg - Vd)
-8
V
Pin
Maximum peak input power overdrive (2)
+18
dBm
Ta
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
-55 to +125
°C
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| CHA5296_07 | 制造商:UMS 制造商全稱(chēng):United Monolithic Semiconductors 功能描述:27-30GHz High Power Amplifier |
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