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參數(shù)資料
| 型號： | CGY40 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) |
| 中文描述： | 100 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 30K |
| 代理商： | CGY40 |
GaAs MMIC
CGY 40
________________________________________________________________________________________________________
D a t a s h e e t
Siemens Aktiengesellschaft
pg. 1/5
11.01.1996
HL EH PD 21
*
Single-stage monolithic microwave IC ( MMIC-
amplifier )
* Application range: 100 MHz to 3 GHz
*
Gain: 9 dB typ. @ 1.6 GHz
*
Low noise figure: 2.7 dB typ. @ 1.6 GHz
*
Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1
*
Operating voltage range: 3 to 5.5 V
* Individual current control with neg. gate bias
* Hermetically sealed ceramic stripline package
Cerec-X
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(tape and reel)
Circuit Diagram
(Pin Configuration)
Package 1)
CGY 40
40
Q68000-A4444
Cerec-X
Maximum ratings
Symbol
Value
Unit
Drain-voltage
VD
VG
5.5
V
Current control gate voltage
-3 ... 0
V
Drain-gate voltage
VDG
PN
TCh
Tstg
Pot
8.5
V
Input power
16
dBm
Channel temperature
150
°C
Storage temperature range
-55...+150
°C
Total power dissipation
(TS < 82°C)
2)
440
mW
Thermal resistance
Channel-soldering point
2)
RhChS
155
K/W
Note:
Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is
required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes.
Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF
performance, stable operating conditions and adequate cooling.
1)
Dimensions see chapter Package Outlines
2) Ts is measured on the source lead at the soldering point to the PCB.
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