參數(shù)資料
型號(hào): CGY2105ATS
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: High dynamic range dual LNA MMIC
中文描述: 1710 MHz - 1910 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: PLASTIC, SSOP-16
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 83K
代理商: CGY2105ATS
1999 Dec 23
4
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2105ATS
CHARACTERISTICS
T
amb
= 25
°
C; measured and guaranteed only for the application shown in Chapter “Application and test information”;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
I
supply
positive supply current (for each LNA)
V
supply
= 5.0 V;
V
neg
=
5.0 V
V
supply
= 5.0 V;
V
neg
=
5.0 V
42
58
72
mA
I
neg
negative supply current (for each LNA)
0.3
0.4
mA
Amplifiers: V
supply
= 5.0 V; V
neg
=
5.0 V; Z
0
= 50
; both LNAs biased; duty cycle 100%
f
i
G
input frequency
gain
1710
16
14.8
11
16.9
16.3
±
0.45
0.55
±
0.25
13.5
±
0.45
1910
17.8
17.8
0.8
MHz
dB
dB
dB
dB
dB
dBm
dB
f
i
= 1710 MHz
f
i
= 1710 to 1910 MHz
40
°
C < T
amb
< +85
°
C
G
(T)
NF
NF
(T)
IP3
i
IP3
i(T)
gain variation with temperature
noise figure
noise figure variation with temperature
input third-order intercept point
input third-order intercept point
variation with temperature
reverse isolation
isolation between inputs
input reflection coefficient
output reflection coefficient
40
°
C < T
amb
< +85
°
C
f =
±
0.5 MHz
40
°
C < T
amb
< +85
°
C
ISO
r
ISO
i
s
11
s
22
18
21
20
23
8.5
22
dB
dB
dB
dB
50
source
50
load
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