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參數(shù)資料
| 型號： | CGY2014TT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | GSM/DCS/PCS power amplifier(GSM/DCS/PCS 功率放大器) |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, HTSSOP-20 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 98K |
| 代理商： | CGY2014TT |
2000 Apr 11
2
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014TT
FEATURES
Operating at 3.6 V battery supply
Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band
Wide operating temperature range from
20 to +85
°
C
HTSSOP20 exposed die pad package.
APPLICATIONS
Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
GENERAL DESCRIPTION
The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins V
DD
(drain) control the power
of the power amplifier and permit to switch it off.
QUICK REFERENCE DATA
Notes
1.
2.
For conditions, see Chapters “DC characteristics” and “AC characteristics”.
The supply circuit includes a (drain) MOS switch with R
DSon
= 40 m
. The battery voltage is 3.6 V (typical value).
ORDERING INFORMATION
SYMBOL
PARAMETER
(1)
CONDITIONS
MIN.
34.5
32
20
TYP.
MAX.
UNIT
V
DD
I
DD(LB)
P
o(LB)(max)
I
DD(HB)
P
o(HB)(max)
T
amb
positive supply voltage
GSM positive peak supply current
maximum output power in GSM band
DCS/PCS positive peak supply current
maximum output power in DCS/PCS band
ambient temperature
note 2
3.5
2
35
1.5
32.5
5.2
+85
V
A
dBm
A
dBm
°
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2014TT
HTSSOP20
plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm
SOT527-1
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