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參數(shù)資料
| 型號： | CGY184 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
| 中文描述： | RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 141K |
| 代理商： | CGY184 |
CGY 184
Siemens Aktiengesellschaft
Semiconductor Group
1
1
23.07.97
HL HF PE GaAs
GaAs MMIC
Preliminary Data
l
Power amplifier for PCN applications
l
2.5 W (34dBm) output power at 3.5 V
l
Overall power added efficiency 43 %
l
Fully integrated 4 stage amplifier
l
Power ramp control
l
Input matched to 50 ohms, simple output match
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package
1)
CGY 184
CGY 184
Q62702G62
MW 16
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
VD
ID
TCh
Tstg
PPulse
9
V
Supply current
4
A
Channel temperature
150
°C
Storage temperature
-55...+150
°C
Pulse peak power dissipation
duty cycle 12.5%, ton=0.577ms
tbd
W
Total power dissipation (Tc
&
Tc: Temperature on case
Ptot
8.5
W
Thermal Resistance
Characteristics
Junction-Case
2)
Symbol
max. Value
Unit
RthJC
≤
8.5
K/W
1)
Dimensions see page 14
2)
see also page 9
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