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參數(shù)資料
| 型號： | CGY181 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) |
| 中文描述： | 1750 MHz - 1750 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 138K |
| 代理商： | CGY181 |
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/14
01.02.96
HL EH PD 21
Preliminary Datasheet
*
Power amplifier for PCN/PCS applications
*
Fully integrated 2 stage amplifier
*
Operating voltage range: 2.7 to 6 V
*
Overall power added efficiency 35 %
*
Input matched to 50
, simple output match
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(8-mm taped)
Package 1)
CGY 181
CGY 181
Q68000-A8883
MW 12
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
VD
VG
ID
TCh
Tstg
Pin
Ptot
9
V
Negative supply voltage
2
)
-8
V
Supply current
2
A
Channel temperature
150
°C
Storage temperature
-55...+150
°C
RF input power
25
dBm
Total power dissipation
(Ts
≤
81 °C)
Ts: Temperature at soldering point
5
W
Thermal Resistance
Channel-soldering point
RthChS
≤
14
K/W
1)Plastic body identical to SOT 223, dimensions see chapter Package Outlines
2) V
G
= -8V only in combination with V
TR
= 0V; V
G
= -6V while V
TR
≠
0V
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