參數(shù)資料
型號(hào): CGY1049
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 放大器
英文描述: 1 GHz, 29 dB gain GaAs push-pull amplifier
中文描述: 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: ROHS COMPLIANT, SOT-115J, 7 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 91K
代理商: CGY1049
CGY1049
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 February 2011
2 of 8
NXP Semiconductors
CGY1049
1 GHz, 29 dB gain GaAs push-pull amplifier
2.
Pinning information
3.
Ordering information
4.
Limiting values
[1]
The value of 2000 V corresponds to a class 2 classification.
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
input
2, 3
common
5+VB
7, 8
common
9output
9
13 57
23 78
5
9
1
sym095
Table 3.
Ordering information
Type number
Package
Name
Description
Version
CGY1049
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
× 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
Unit
VB
supply voltage
-
30
V
Vi(RF)
RF input voltage
single tone
-
75
dBmV
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard
22-A114E
-
2000 V
Biased; According
IEC61000-4-2
-
2000 V
Tstg
storage temperature
40 +100 °C
Tmb
mounting base temperature
20 +100 °C
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