參數(shù)資料
型號(hào): CGH40045
廠商: Cree, Inc.
英文描述: 45 W, RF Power GaN HEMT
中文描述: 45瓦,射頻功率GaN HEMT器件
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 924K
代理商: CGH40045
2
CGH40045 Rev . Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V
DSS
V
GS
T
STG
T
J
I
GMAX
T
S
84
Volts
Gate-to-Source Voltage
-10, +2
Volts
Storage Temperature
-55, +150
C
Operating Junction Temperature
175
C
Maximum Forward Gate Current
15
mA
Soldering Temperature
245
C
Thermal Resistance, Junction to
Case
1
R
θ
JC
2.7
C/W
Note:
1
Measured for the CGH40045F at 43W P
DISS
.
Electrical Characteristics (T
C
= 25C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
2
Gate Threshold Voltage
V
GS(th)
-3.0
-2.5
-1.8
VDC
V
DS
= 10 V, I
D
= 14.4 mA
Gate Quiescent Voltage
V
GS(Q)
-2.3
VDC
V
DS
= 28 V, I
D
= 800 mA
Saturated Drain Current
3
I
DS
9.6
10.8
A
V
DS
= 6.0 V, V
GS
= 2.0 V
Drain-Source Breakdown Voltage
V
BR
84
100
VDC
V
GS
= -8 V, I
D
= 14.4 mA
Case Operating Temperature
4
T
C
-10
+60
C
P
DISS
= 43 W
Screw Torque
T
80
in-oz
Reference 440193 Rev 1
RF Characteristics (T
C
= 25
C, F
0
= 3.6 GHz unless otherwise noted)
Small Signal Gain
G
SS
11.0
12.0
dB
V
DD
= 28 V, I
DQ
= 800 mA
Power Output at 3 dB
Compression
P
3dB
45
55
W
V
DD
= 28 V, I
DQ
= 800 mA
Drain Efficiency
1
η
50
55
%
V
DD
= 28 V, I
DQ
= 800 mA, P
OUT
= P
3dB
Output Mismatch Stress
VSWR
TBD
Y
No damage at all phase angles,
V
DD
= 28 V, I
= 800 mA,
P
OUT
= 45 W CW
Dynamic Characteristics
Input Capacitance
C
GS
19.3
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance
C
DS
4.6
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance
C
GD
1.7
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Drain Efficiency = P
/ P
2
Measured on wafer prior to packaging.
3
Scaled from PCM data.
4
See also, the Power Dissipation De-rating Curve on Page 5.
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