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參數(shù)資料
| 型號(hào)： | CGA-3318Z |
| 英文描述： | Dual CATV Broadband High Linearity SiGe HBT Amplifier |
| 中文描述： | 雙有線電視寬帶高線性SiGe HBT的放大器 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 245K |
| 代理商： | CGA-3318Z |
Broomfield, CO 80021
6
EDS-101993 Rev H
303 S. Technology Ct.
Phone: (800) SMI-MMIC http://www.sirenza.com
CGA-3318 Dual SiGe HBT Amplifier
Pin #
Function
Description
Device Pin Out
1
RF IN
Device 1
RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the
schematic.
2,3
Ground
Connection to ground. Use via holes for best performance to reduce lead inductance as close
to ground leads as possible.
4
RF IN
Device 2
Same as pin 1
5
RF OUT / Vcc
Device 2
RF output and bias pin. Bias should be supplied to this pin through an external series resistor
and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor
should be used in most applications (see application schematic). The supply side of the bias
network should be well bypassed.
6,7
Ground
Same as pins 2 and 3
8
RF OUT / Vcc
Device 1
Same as pin 5
EPAD
Ground
Exposed area on the bottom side of the package must be soldered to the ground plane of the
board for optimum thermal and RF performance. Several vias should be located under the
EPAD as shown in the recommended land pattern on page 5.
50-870 MHz Application Schematic
CGA-3318
SOIC-08
1000 pF
0.01
μ
F
1000pF
68pF
V
s
R
BIAS
Amp 1
1000 pF
1000 pF
1000 pF
220 nH
Macom
ETC1-1-13
Macom
ETC1-1-13
1
μ
F Tant.
1
μ
F Tant.
0.01
μ
F
1000pF
68pF
220 nH
V
s
R
BIAS
Amp 2
1
4
8
5
6,7
2,3
50-870 MHz Evaluation Board Layout
1
2
3
4
8
7
6
5
2(V
S
-V
D
)
I
D
R
BIAS
=
ECB-101611 Rev A
ESOP-8
Push-Pull
Eval Board
RF OUTPUT
RF INPUT
.01uF
1000pF
68pF
220nH
220nH
68pF
1000pF
.01uF
1000pF
1000pF
1000pF
1000pF
Balun ETC1-1-13
Balun ETC1-1-13
Rbias
Rbias
1uF Tant.
1uF Tant.
Part Number Ordering Information
Part Number
Reel Size
Devices / Reel
CGA-3318
7"
500
CGA-3318Z
7"
500
Supply Voltage (V
S
)
R
BIAS
R
BIAS
Power Rating
8V
9V
12V
15V
51
62
100
150
1/2W
1/2W
1W
1W
Recommended Bias Resistor Values for ID= 150mA
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相關(guān)代理商/技術(shù)參數(shù) |
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| CGA3318Z-EVB1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER |
| CGA3318Z-EVB2 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER |
| CGA3318ZSB | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER |
| CGA3318ZSQ | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER |
| CGA3318ZSR | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER |
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