參數(shù)資料
型號(hào)： CFC2026Y
廠商： Continental Device India Limited
英文描述： NPN SILICON PLANAR POWER TRANSISTOR
中文描述： NPN硅平面功率晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 108K
代理商： CFC2026Y
NPN SILICON PLANAR POWER TRANSISTOR
CFC2026
TO-220FP Fully Isolated
Plastic Package
Complementary CFA1046
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.
<30%, T
a
= 25
o
C)
Collector Current
Base Current
Collector Power Dissipation @T
a
=25
o
C
@T
c
=25
o
C
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
** V
ISOL
(a)
(b)
I
C
I
B
P
C
T
j
T
stg
** RMS Isolation Voltage: (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
in Screw Mounting Position (for 1sec, R.H.<30%, T
a
=25
o
C; Pulse Test: Pulse Width <300
m
s, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I
CBO
I
EBO
V
CEO
*h
FE
V
CE(sat)
V
BE(on)
f
T
C
ob
TEST CONDITION
V
CB
= 60V, I
E
=0
V
EB
= 7V, I
C
=0
I
C
= 50mA, I
B
=0
V
CE
= 5V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.2A
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 0.5A
V
CB
= 10V, I
E
=0, f=1MHz
MIN
TYP
MAX
100
100
UNIT
μ
A
μ
A
V
60
100
300
1
1
V
V
30
35
MHz
pF
Switching Time
Turn On Time
Storage Time
Fall Time
t
on
t
stg
t
f
I
B1
= I
B2
= 0.2A
V
CC
= 30V
Duty Cycle < 1%
0.65
1.30
0.65
μ
s
μ
s
μ
s
*h
FE
Classification
Y : 100 - 200
GR : 150 - 300
VALUE
60
60
7.0
3500
W
W
oC
oC
V
V
RMS
V
RMS
A
A
UNIT
V
V
1500
3.0
0.5
2.0
25
150
- 55 to 150
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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