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參數(shù)資料
| 型號： | CFB1370D |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220FP |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 60V的五（巴西）總裁| 3A條一（c）|至220FP |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 40K |
| 代理商： | CFB1370D |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
CFB1342
(9AW)
TO-220FP
MARKING:- CFB
1342
Low Freq. Power Amp.
Built in Damper Diode
Complementry CFD1933
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse*)
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
*Single Pulse Pw=100ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
80
80
7.0
4.0
6.0
2.0
60
150.00
-55 to +150
UNIT
V
V
V
A
A
W
W
deg C
deg C
PC
Tj
Tstg
SYMBOL TEST CONDITION
VCEO
IC=1mA, IB=0
VCBO
IC=50uA, IE=0
ICBO
VCB=80V, IE=0
IEBO
VEB=5V,IC=0
VCE(Sat) IC=2A,IB=4mA
hFE
IC=2A, VCE=3V
IC=4A, VCE=3V
MIN
80
80
-
-
-
1.0
500
TYP
-
-
-
-
-
-
-
MAX
-
-
100
3.0
1.5
10
-
UNIT
V
V
uA
mA
V
K
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=0.5A,
f=1MHz
VCB=10V, IE=0
f=1MHz
-
12
-
MHz
Collector Output Capacitance
Cob
-
45
-
pF
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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| CFB1370E | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:PNP SILICON EPITAXIAL POWER TRANSISTOR |
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