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參數(shù)資料
| 型號： | CFA1012 |
| 廠商： | Continental Device India Limited |
| 英文描述： | PNP SILICON PLANAR POWER TRANSISTOR |
| 中文描述： | 進(jìn)步黨硅平面功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 141K |
| 代理商： | CFA1012 |
Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
PNP SILICON PLANAR POWER TRANSISTOR
CFA1012
TO-220FP Fully Isolated
Plastic Package
Complementary CFC2562
High Current Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage (for 1sec, R.H.<30%,
T
a
=25oC
SYMBOL
V
CBO
V
CEO
V
EBO
* V
ISOL
(a)
(b)
I
C
P
C
T
j
T
stg
Collector Current
Collector Power Dissipation @T
c
=25
o
C
Junction Temperature
Storage Temperature Range
*RMS Isolation Voltage: (a) 3500 V
RMS
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package
in Screw Mounting Position (for 1sec, R.H.<30%, T
a
=25
o
C; Pulse Test: Pulse Width <300
m
s, Duty Cycle<2%)
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless otherwise specified)
DESCRIPTION
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Voltage
DC Current Gain
SYMBOL
I
CBO
I
EBO
V
CEO
**h
FE
h
FE
V
CE (sat)
V
BE (sat)
f
T
C
ob
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=1V, I
C
=1A
V
CE
=1V, I
C
=3A
I
C
=3A, I
B
=0.15A
I
C
=3A, I
B
=0.15A
V
CE
=4V, I
C
=1A
V
CB
=10V, I
E
=0, f=1MHz
MIN
TYP
MAX
1
1
UNIT
μ
A
μ
A
V
50
70
30
240
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
1.0
1.2
V
V
60
170
MHz
pF
Switching Time
Turn On Time
Storage Time
Fall Time
t
on
t
stg
t
f
I
B1
=I
B2
=0.15A
V
CC
=30V
Duty Cycle < 1%
0.1
1.0
0.1
μ
s
μ
s
μ
s
**h
FE
Classification
O : 70 - 140
Y: 120 - 240
CFA1012Rev_1 241103E
VALUE
60
50
5
W
oC
V
V
RMS
V
RMS
A
UNIT
V
V
1500
5
25
150
3500
o
C
- 55 to 150
Continental Device India Limited
Data Sheet
Page 1 of 3
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