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參數(shù)資料
| 型號： | CEU6601 |
| 廠商： | Chino-Excel Technology Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 170K |
| 代理商： | CEU6601 |
CED6601/CEU6601
Electrical Characteristics
Tc = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Forward Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
c
BV
DSS
I
DSS
I
GSSF
I
GSSR
86
125
70
95
-1
-3
-100
100
-1
m
m
V
nA
nA
μ
A
V
S
2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
Turn-Off Delay Time
Test Condition
V
GS
= 0V, I
D
= -250
μ
A
V
DS
= -60V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Typ
Max
-60
V
GS
= V
DS
, I
D
= -250
μ
A
V
GS
= -10V, I
D
= -8A
V
GS
= -4.5V, I
D
= -6A
V
DS
= -10V, I
D
= -15A
V
DD
= -30V, I
D
= -1A,
V
GS
= -10V, R
GEN
= 6
V
DS
= -30V, I
D
= -3.5A,
V
GS
= -10V
V
= -30V, V
GS
= 0V,
f = 1.0 MHz
V
GS
= 0V, I
S
= -1.3A
1130
120
70
15
8
69
20
19.2
3.2
4
30
16
138
40
25.5
-16
-1.2
pF
pF
pF
ns
ns
ns
nC
nC
ns
nC
A
V
10
6
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
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