參數(shù)資料
型號: CEU540A
廠商: Chino-Excel Technology Corp.
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應管
文件頁數(shù): 2/4頁
文件大小: 94K
代理商: CEU540A
CED540A/CEU540A
Electrical Characteristics
Tc = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Forward Transconductance
Input Capacitance
Output Capacitance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
c
BV
DSS
I
DSS
I
GSSF
I
GSSR
49
2
4
-100
100
25
m
V
nA
nA
μ
A
V
S
pF
pF
6 - 75
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
Turn-Off Delay Time
Test Condition
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 100V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Typ
Max
100
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 18A
V
DS
= 25V, I
D
= 18A
V
DD
= 50V, I
D
= 18A,
V
GS
= 10V, R
GEN
= 5.1
V
DS
= 80V, I
D
= 18A,
V
GS
= 10V
V
= 25V, V
GS
= 0V,
f = 1.0 MHz
V
GS
= 0V, I
S
= 18A
832
240
105
13
11
32
15
37.5
6
18
40
35
65
45
48
25
1.3
14
pF
ns
ns
ns
nC
nC
ns
nC
A
V
6
42
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
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