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參數(shù)資料
| 型號(hào)： | CEU4060A |
| 英文描述： | 60V N Channel MOS |
| 中文描述： | 60V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | CEU4060A |
CED4060A/CEU4060A
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250
μ
A
60
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60V, V
GS
=0V
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
μ
A
2
2.7
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=7.5A
85
m
On-State Drain Current
I
D(ON)
g
V
GS
=10V, V
DS
=10V
15
A
6
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
= 7.5A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
335
P
F
150
P
F
P
F
40
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
=30V,
I
D
= 15A,
V
GS
= 10V,
R
GEN
=25
20
ns
ns
ns
ns
100
30
50
10
65
15
30
10
4
2.4
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= 48V, I
D
=15A,
V
GS
= 10V
13
nC
nC
nC
6-18
6
68
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEU4060AL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60V N Channel MOS |
| CEU40N10 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU41A2 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU4201 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| CEU4204 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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