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參數(shù)資料
| 型號(hào)： | CEPF634 |
| 廠(chǎng)商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | CEPF634 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
250
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=250V, V
GS
=0V
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 30V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
μ
A
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.1A
450
m
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
10
4.4
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=50V, I
D
=5.1A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
630
P
F
100
P
F
P
F
40
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
=125V,
I
D
= 5.6A,
V
GS
= 10V,
R
GEN
= 12
19
ns
ns
ns
ns
11
46
10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=200V, I
D
= 5.6A,
V
GS
=10V
33
nC
nC
nC
5
11
Fall Time
4
4-28
26
30
90
30
40
CEPF634/CEBF634
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEPF634_06 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEPF634_10 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEPF640 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEPF640_08 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEPFZ44 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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