參數(shù)資料
型號(hào): CEP08N5
英文描述: 500V N Channel MOS
中文描述: 500V ?頻道馬鞍山
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 41K
代理商: CEP08N5
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =8A
1.5
V
a
Notes
a.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
4-34
Figure 1. Output Characteristics
I
D
,
I
D
,
b
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
800
P
F
110
P
F
P
F
70
CEP08N5/CEB08N5
Figure 2. Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
V
GS
=10,9,8,7V
V
GS
=5V
V
GS
=6V
0.1
1
2
4
6
10
8
25 C
150 C
-55 C
1.V
DS
=40V
2.Pulse Test
10
4
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