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參數(shù)資料
| 型號： | CEP06N5 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強模式的邏輯電平場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | CEP06N5 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
a
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V,I
D
= 250
μ
A
500
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500V, V
GS
= 0V
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
30V, V
DS
= 0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
1.0
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
4
A
S
Forward Transconductance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
FS
V
DS
=50V, I
D
= 4A
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
=250V,
I
D
= 6A,
V
GS
= 10V
R
GEN
=18
23
45
ns
ns
ns
ns
35
70
162
44
240
90
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=400V, I
D
= 6A,
V
GS
=10V
54
65
nC
nC
nC
Fall Time
4-18
E
AS
I
AS
V
DD
=50V, L=24mH
R
G
=25
A
mJ
CEP06N5/CEB06N5
6
500
27
0.85
6
9
4
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| CEB4050A | N-Channel Enhancement Mode Field Transistor |
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| CEP60N10 | N-Channel Enhancement Mode Field Effect Transistor |
| CEB62A3 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEP07N65 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEP07N7 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEP07N8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:800V N Channel MOS |
| CEP-08 | 制造商:PROTECTIVE CLOSURES 功能描述: |
| CEP08N5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500V N Channel MOS |
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