參數(shù)資料
型號(hào): CEM4804
廠商: Chino-Excel Technology Corp.
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙N溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù): 3/5頁
文件大?。?/td> 54K
代理商: CEM4804
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =2A
1.3
V
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
C
I
D
,
5-100
5
CEM4804
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
-50 -25
0
25
50
75
100 125 150
1.80
1.60
1.40
1.20
1.00
0.80
0.60
V
GS
=10V
I
D
=6.3A
R
D
,
15
12
9
6
3
01.0
1.5
2.0
2.5
3.0
25 C
Tj=125 C
-55 C
20
16
12
8
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,8,6,5V
V
GS
=3V
V
GS
=4V
1200
1000
800
600
400
200
0
5
10
15
20
25
30
Ciss
Coss
Crss
0
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