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參數(shù)資料
| 型號： | CED703AL |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | CED703AL |
CED703AL/CEU703AL
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250
μ
A
=
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
24V, V
GS
0V
=
V
GS
=
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
20V, V
DS
=0V
=
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
=
=
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
10V, I
D
=25A
15
19
m
m
V
GS
4.5V, I
D
=10A
23
32
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
60
30
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=25A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
1000
P
F
420
P
F
P
F
100
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
=25A,
V
GS
= 10V,
R
GEN
=24
18
23
ns
ns
ns
ns
120
180
80
120
60
165
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 25A,
V
GS
=5V
15
20
nC
nC
nC
4
6
Fall Time
6
6-48
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PDF描述 |
|---|---|
| CEU703AL | 30V N Channel MOS |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CED71A3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V N Channel MOS |
| CED72A3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V N Channel MOS |
| CED730G | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED73A3 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED73A3G | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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