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參數(shù)資料
| 型號(hào)： | CEBF634 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | CEBF634 |
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
V
G
g
F
,
V
G
,
B
D
,
D
I
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
4
4-30
-50 -25
0
25
50
75
100
125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
1.30
1.20
1.10
1.0
0.90
0.80
0.70
0.60
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
20
10
0.1
1
0.4
0.6
0.8
1.2
1.0
V
GS
=0V
10
10
0
10
10
3
2
1
10
-1
10
0
10
1
T
C
=25 C
Tj=150 C
Single Pulse
100
s
R
DS
(ON im
DC
1m
10m
8
6
4
2
0
10
0
7
14
21
28
V
DS
=200V
I
D
=5.6A
5
4
6
0
1
2
3
0
2
4
6
8
V
DS
=50V
CEPF634/CEBF634
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEBF640 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEBFM1E221M6T36 | 制造商:MAR 功能描述:RL722X025 .2LS AMMO 500/PER 制造商:MARCON 功能描述:AMMO 10X12 MARCON S8L6C,S8L5A |
| CEBFM1E221M6-T36 | 制造商:MARCON 功能描述:AMMO 10X12 MARCON S8L6C,S8L5A |
| CEBFZ44 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEBLZ44 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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