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參數(shù)資料
| 型號： | CEB62A3 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 52K |
| 代理商： | CEB62A3 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
= 250
μ
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 26A
10
m
m
V
GS
= 4.5V, I
D
= 21A
15
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 5V
60
36
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=26A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
1100
P
F
P
F
P
F
180
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall Time
V
DD
= 15V,
I
D
=60A,
V
GEN
= 10V
R
G
=24
19
48
ns
ns
ns
ns
36
97
68
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
nC
nC
nC
8.5
12
600
35
42
6
11
V
DS
=15V
,
I
D
= 30A
,
V
GS
=10V
72
175
135
CEP62A3/CEB62A3
4
4-178
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEB630N | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB6336 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB63A3 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB6426 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB655N | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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