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參數資料
| 型號： | CEB08N5 |
| 英文描述： | 500V N Channel MOS |
| 中文描述： | 500V ?頻道馬鞍山 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | CEB08N5 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
a
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V,I
D
= 250
μ
A
500
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500V, V
GS
= 0V
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
30V, V
DS
= 0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4.8A
0.85
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
5
A
S
Forward Transconductance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
FS
V
DS
=50V, I
D
= 6A
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
=250V,
I
D
= 8A,
V
GS
= 10V
R
GEN
=9.1
18
ns
ns
ns
ns
25
105
38
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=400V, I
D
= 8A,
V
GS
=10V
56
65
nC
nC
nC
Fall Time
4-33
E
AS
I
AS
V
DD
=50V, L=14mH
R
G
=25
A
mJ
CEP08N5/CEB08N5
8
500
30
0.76
8
6
4
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相關代理商/技術參數 |
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| CEB09N7G | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB1012 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Transistor |
| CEB1012L | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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