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參數(shù)資料
| 型號(hào)： | CEB02N6 |
| 廠(chǎng)商： | Chino-Excel Technology Corp. |
| 英文描述： | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N溝道邏輯電平增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | CEB02N6 |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =2A
1.5
V
a
Notes
a.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
c.L=60mH, I
AS
=2.0A,V
DD
=50V, R
G
=25 , StartingT
J
=25 C
4-4
Figure 1. Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
I
D
,
I
D
,
b
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
4
250
P
F
50
P
F
P
F
30
CEP02N6/CEB02N6
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
12
V
GS
=10,9,8,7V
V
GS
=5V
V
GS
=6V
Figure 2. Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
0.1
1
2
4
6
10
8
25 C
150 C
-55 C
1.V
DS
=40V
2.Pulse Test
4
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| CEP02N6 | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEB02N6A | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB02N6G | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB02N7 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB02N7G | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB04N6 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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