參數資料
型號: CDLL4150-1
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 參考電壓二極管
英文描述: SWITCHING DIODE
中文描述: 0.3 A, SILICON, SIGNAL DIODE, DO-213AA
封裝: HERMETIC SEALED, GLASS, LL34, MELF-2
文件頁數: 1/2頁
文件大?。?/td> 52K
代理商: CDLL4150-1
MILLIMETERS INCHES
MIN
MAX
1.60
1.70
0.41
0.55
3.30
3.70
2.54 REF.
0.03 MIN.
DIM
D
F
G
G1
S
MIN
0.063 0.067
0.016 0.022
.130
.100 REF.
.001 MIN.
MAX
.146
115
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (781) 689-0803
1N4150UR-1 AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/231
SWITCHING DIODE
HERMETICALLY SEALED
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
FIGURE 1
DESIGN DATA
CASE:
DO-213AA
,
Hermetically sealed
glass case. (MELF, SOD-80; LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE (ROJEC)
:
100 °C/W maximum AT L = 0
THERMAL IMPEDANCE: (
Z
O
JX): 70
°C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
1N4150UR-1
1N3600UR
CDLL4150
CDLL3600
V F1
V F2
V F3
V F4
VF5
Limits
I F= 1 mA dc
I F= 10 mA dc
I F= 50 mA dc
(Pulsed)
I F= 100 mA dc
(Pulsed)
I F= 200 mA dc
(Pulsed)
V dc
V dc
V dc
V dc
V dc
minimum
maximum
0.540
0.620
0.680
0.740
0.780
0.860
0.820
0.920
0.870
1.000
Type
V BR
V RWM
I R1
1 R2
C
trr
VR= 50 V dc
TA= 25°C
VR= 50 V dc
TA= 150°C
ac signals = 50 m V (p-p)
IF= IR= 10 to 100 mA dc
R L = 100 ohms
IR= 10
μ
A
V dc
V (pk)
μA dc
μA dc
pF
ns
CDLL3600
CDLL4150,-1
75
75
50
50
0.1
0.1
100
100
2.5
2.5
4
4
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA= + 25°C
Derating: 3.1 mA dc/°C Above TEC = + 110°C
Forward Surge Current: 4A, (tp = 1μs); 0.5A (tp = 1s)
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specied.
FORWARD VOLTAGE LIMITS – ALL TYPES
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