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參數(shù)資料
| 型號： | CD9012J |
| 英文描述： | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | TO-92 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 25V的五（巴西）總裁|到92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | CD9012J |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR TRANSISTOR
CD9012
TO-92
CBE
General Purpose Audio Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PC
Tj, Tstg
VALUE
30
40
5.0
500
625
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
TEST CONDITION
IC=1mA, IB=0
IC=100uA, IE=0
IE=100uA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
IC=50mA,VCE=1V *
IC=500mA,VCE=1V
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
MIN
30
40
5.0
-
-
64
40
-
-
-
-
TYP
-
-
-
-
-
-
MAX
-
-
-
100
100
465
UNIT
V
V
V
nA
nA
Collector Emitter Saturation Voltage
VCE(Sat)
-
-
-
-
0.20
0.60
1.0
1.2
V
V
V
V
Base Emitter Saturation Voltage
VBE(Sat)
Dynamic Characteristics
Output Capacitance
Transition Frequency
Cob VCB=10V,f=1MHz
ft VCE=10V, IC=50mA,
f=100MHz
NF
VCE=10V, IC=1mA
f=1KHz
D/E/F= 64 t G/H/I= 118 to 305:
-
-
-
10
-
pF
MHz
200
Noise Figure
-
-
6.0
dB
hFE CLASSIFICATION *
J 278 to 465
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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