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參數(shù)資料
| 型號： | CD8550B |
| 英文描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 25V的五（巴西）總裁|到92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | CD8550B |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR TRANSISTOR
CD8550
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PC
Tj, Tstg
VALUE
25
40
6.0
2.0
1.0
-55 to +125
UNIT
V
V
V
A
W
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
TEST CONDITION
IC=10mA, IB=0
IC=100uA, IE=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
IC=5mA,VCE=1V
IC=100mA,VCE=1V*
IC=800mA,VCE=1V
IC=800mA,IB=80mA
IC=800mA,IB=80mA
MIN
25
40
6.0
-
-
45
85
40
-
-
TYP
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
500
100
-
300
-
0.50
1.2
UNIT
V
V
V
nA
nA
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCE(Sat)
VBE(Sat)
V
V
Dynamic Characteristics
Output Capacitance
Transition Frequency
Cob VCB=10V,f=1MHz
ft VCE=10V,IC=100mA,
f=100MHz
-
-
-
35
-
pF
MHz
100
CLASSIFICATION
hFE*
B
C
D
85-160
120-200
160-300
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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