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參數(shù)資料
| 型號(hào)： | CD825 |
| 英文描述： | Monolithic Temperature Compensated Zener Reference Chips(單片溫度補(bǔ)償齊納基準(zhǔn)芯片) |
| 中文描述： | 單片溫度補(bǔ)償齊納參考芯片（單片溫度補(bǔ)償齊納基準(zhǔn)芯片） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | CD825 |
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
REVERSE LEAKAGE CURRENT
l
R
= 2
μ
A @ 25°C & VR= 3 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
-55° TO +100°
CDI
TYPE
NUMBER
ZENER ZENER MAXIMUM VOLTAGE
VOLTAGE
TEST
CURRENT
VZT@ I ZT
EFFECTIVE
TEMPERATURE
COEFFICIENT
ZENER
IMPEDANCE
ZZT
TEMPERATURE
STABILITY
VZT
I ZT
(Note 1)
(Note 2)
VOLTS
mA
OHMS
mV
% / °C
CD821
CD821A
CD823
CD823A
CD825
CD825A
CD826
CD827
CD827A
CD828
CD829
CD829A
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
5.9 - 6.5
6.2 - 6.9
5.9 - 6.5
5.9 - 6.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
15
10
15
10
15
10
15
15
10
15
15
10
96
96
48
48
19
19
20
9
9
10
5
5
0.01
0.01
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
NOTE 1
Zener impedance is derived by superimposing on lZTA 60Hz rms a.c.
current equal to 10% of lZT.
NOTE 2
The maximum allowable change observed over the entire temperature
range i.e.,the diode voltage will not exceed the specified mV at any
discrete temperature between the established limits, per JEDEC
standard No.5.
Backside is not cathode
and must be electrically isolated
T = Metallization Test Pad
DESIGN DATA
METALLIZATION:
Top: C (Cathode) ...................Al
A (Anode) ...................... Al
Back: .......................................Au
AL THICKNESS
.........25,000
Min
GOLD THICKNESS
......4,000
Min
CHIP THICKNESS
...............10 Mils
CIRCUIT LAYOUT DATA:
Backside must be electrically
isolated.
Backside is not cathode.
For Zener operation cathode must
be operated positive with respect
to anode.
TOLERANCES:
ALL
Dimensions + 2 mils
1N821 THRU 1N829 AVAILABLE IN
JANHC AND JANKC
PER MIL-PRF-19500/159
MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS
ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829
COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD821
thru
CD829A
2
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CD8256CZ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:6W×3三通道音頻功率放大電路 =TA8256AH |
| CD825A | 制造商:CDI-DIODE 制造商全稱(chēng):Compensated Deuices Incorporated 功能描述:MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS |
| CD826 | 制造商:CDI-DIODE 制造商全稱(chēng):Compensated Deuices Incorporated 功能描述:MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS |
| CD826A | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS |
| CD827 | 制造商:CDI-DIODE 制造商全稱(chēng):Compensated Deuices Incorporated 功能描述:MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS |
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