參數(shù)資料
型號(hào): CD74HC22106
廠商: Intersil Corporation
英文描述: QMOS 8 x 8 x 1 Crosspoint Switches with Memory Control
中文描述: QMOS 8 × 8 × 1交叉點(diǎn)開(kāi)關(guān),內(nèi)存控制
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 68K
代理商: CD74HC22106
67
Absolute Maximum Ratings
Thermal Information
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .175
o
C
Maximum Junction Temperature (Plastic Package). . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . -65
o
C
T
A
150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
DC Supply Voltage (V
DD
)
Voltage Reference to V
SS
Terminal . . . . . . . . . . . . . .-0.5V to 11V
DC Input Diode Current
I
IK
(for V
I
< -0.5 or V
I
> V
DD
0.5V
. . . . . . . . . . . . . . . . . . . . . .±
20mA
DC Output Diode Current
I
OK
(For V
O
< -0.5 or V
O
> V
DD
0.5V
. . . . . . . . . . . . . . . . . . .±
20mA
DC Transmission Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . .±
25mA
Power Dissipation per Package (P
D
)
For T
A
= -40
o
C to 60
o
C (Package Type E). . . . . . . . . . . . . . . 500mW
For T
A
= -60
o
C to 85
o
C (Package Type E). . . . . . .Derate Linearily at
12mW/
o
C to 200mW
Operating Conditions
Temperature Range (T
A
)
Package Type E . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Supply Voltage Range (for T
A
= Full Package Temp. Range) V
DD
CD74HC22106. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V to 10V
DC Input or Output Voltage V
I
, V
O
. . . . . . . . . . . . . . . . . . .0V to V
DD
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
V
SS
= GND
PARAMETER
TEST CONDITIONS
25
o
C
-40
o
C TO 85
o
C
UNITS
V
IS
(V)
V
DD
(V)
MIN
TYP
MAX
MIN
MAX
STATIC SPECIFICATIONS
High-Level Input Voltage, V
IH
-
2
1.5
-
-
1.5
-
V
-
4.5
3.15
-
-
3.5
-
-
9
6.3
-
-
6.3
-
Low-Level Input Voltage, V
IL
-
2
-
-
0.5
-
0.5
V
-
4.5
-
-
1.35
-
1.35
-
9
-
-
2.7
-
2.7
Input Leakage Current (Any Control), I
L
V
DD
or
GND
10
-
-
±
0.1
-
±
1
μ
A
Quiescent Device Current, I
CC
(with MR = 1)
V
DD
or
GND
10
-
-
5
-
50
μ
A
Off Leakage Current, I
L
(with MR = 1)
AllSwitches
OFF
10
-
-
0.1
-
1
μ
A
‘‘On’’ Resistance, R
ON
V
DD
to
GND
Figures
7, 8
2
-
470
700
-
875
4.5
-
64
95
-
120
9
-
45
70
-
90
V
DD
/2
-
-
-
-
-
-
4.5
-
58
85
-
110
9
-
40
60
-
80
‘‘On’’ Resistance
Between Any Two Channels
R
ON
V
DD
to
GND
-
-
-
-
-
-
4.5
-
25
-
-
-
9
-
23
-
-
-
CD74HC22106
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