參數(shù)資料
型號(hào)： CD631415
英文描述： THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|150A I(T)
中文描述： 晶閘管模塊|可控硅倍增| 1.4KV五（無(wú)線資源管理）| 150A我（翻譯）
文件頁(yè)數(shù)： 3/4頁(yè)
文件大小： 80K
代理商： CD631415
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
TM
Dual SCR Isolated Module
Up to 160 Amperes & 1600 Volts
Electrical Characteristics, T
J
=25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
50
Units
Repetitive Peak Forward Leakage Current
I
DRM
I
RRM
V
TM
V
(TO)1
r
T1
Up to 1600V, T
J
=125
°
C
Up to 1600V, T
J
=125
°
C
I
TM
=500A
T
J
= 125
°
C, I = 16.7% x
π
I
T(AV)
to
π
I
T(AV)
mA
Repetitive Peak Reverse Leakage Current
50
mA
Peak On-State Voltage
1.54
V
Threshold Voltage, Low-level
Slope Resistance, Low-level
0.80
1.67
V
m
Threshold Voltage, High-level
Slope Resistance, High-level
V
(TO)2
r
T2
T
J
= 125
°
C, I =
π
I
T(AV)
to I
TSM
0.98
1.38
V
m
V
TM
Coefficients, Full Range
T
J
= 125
°
C, I = 15% x I
T(AV)
to I
TSM
V
TM
= A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D =
0.5926
-1.10E-03
1.03E-03
0.0241
Minimum dV/dt
dV/dt
Exponential to 2/3 V
DRM
T
j
=125
°
C, Gate Open
I
TM
= 300A, V
D
= 2/3 V
DRM
dIg/dt =1A/
m
s
1000
V/
m
s
Turn-On Time (Typical)
t
on
3
(Typical)
m
s
Turn-Off Time (Typical)
t
off
T
J
= 125
°
C, I
T
= 300A, R
gk
= 100
V
r
= 50V, -dI/dt=15 A/
m
s
Re-Applied dV/dt = 20V/
m
s,
Linear to 2/3 V
DRM
T
j
= -40
°
C, V
D
=6V, R
a
=1
, Resistive Load
T
j
= 25
°
C, V
D
=6V, R
a
=1
, Resistive Load
T
j
=125
°
C, V
D
=6V, R
a
=1
, Resistive Load
T
j
= -40
°
C, V
D
=6V, R
a
=1
, Resistive Load
T
j
= 25
°
C, V
D
=6V, R
a
=1
, Resistive Load
T
j
=125
°
C, V
D
=6V, R
a
=1
, Resistive Load
T
j
=125
°
C, V
D
=V
DRM
T
j
=125
°
C, V
D
=V
DRM
50 - 200 (Typical)
m
s
Gate Trigger Current
I
GT
270
150
80
mA
mA
mA
Gate Trigger Voltage
V
GT
4.0
2.5
1.7
Volts
Volts
Volts
Non-Triggering Gate Voltage
V
GDM
0.30
Volts
Non-Triggering Gate Current
I
GDM
10
mA
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
DC Operation
Symbol
Max.
0.08
0.16
Units
°
C/W
°
C/W
R
Θ
J-C
Per Module, both conducting
Per Junction, both conducting
Thermal Impedance Coefficients
(Per Junction)
Z
Q
J-C
Z
Q
J-C
= K
1
(1-exp(-t/
t
1
))
+ K
2
(1-exp(-t/
t
2
))
+ K
3
(1-exp(-t/
t
3
))
+ K
4
(1-exp(-t/
t
4
))
Per Module
K
1
=5.45334E-3
K
2
=3.8509E+1
K
3
= -3.5154E+1
K
4
= -3.20
t
1
=4.511E-5
t
2
=1.3558E-1
t
3
=1.3311E-1
t
4
=1.5936E-1
0.05
Thermal Resistance, Case to Sink Lubricated
R
Θ
C-S
°
C/W
05/09/2000
CD63__15A
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