參數(shù)資料
型號(hào)： CD4095BMS
廠商： Intersil Corporation
英文描述： CMOS J-K Master-Slave Flip-Flops(CMOS J-K 主從觸發(fā)器)
中文描述： 的CMOS JK主從觸發(fā)器（的CMOS JK主從觸發(fā)器）
文件頁數(shù)： 4/10頁
文件大?。?/td> 101K
代理商： CD4095BMS
7-1097
Specifications CD4095BMS, CD4096BMS
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-2.4
mA
-55
o
C
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
+7
-
V
Propagation Delay
Clock to Output
TPHL
TPLH
VDD = 10V
1, 2, 3
+25
o
C
-
200
ns
VDD = 15V
1, 2, 3
+25
o
C
-
150
ns
Propagation Delay
Set or Reset to Output
TPHL
TPLH
VDD = 10V
1, 2, 3
+25
o
C
-
150
ns
VDD = 15V
1, 2, 3
+25
o
C
-
100
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
Maximum Clock Input
Frequency
FCL
VDD = 10V
1, 2, 3
+25
o
C
8
-
MHz
VDD = 15V
1, 2, 3
+25
o
C
12
-
MHz
Minimum Set or Reset
Pulse Width
TW
VDD = 5V
1, 2, 3
+25
o
C
-
200
ns
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
50
ns
Minimum Data Setup
Time
TS
VDD = 5V
1, 2, 3
+25
o
C
-
400
ns
VDD = 10V
1, 2, 3
+25
o
C
-
160
ns
VDD = 15V
1, 2, 3
+25
o
C
-
100
ns
Minimum Clock Pulse
Width
TW
VDD = 5V
1, 2, 3
+25
o
C
-
140
ns
VDD = 10V
1, 2, 3
+25
o
C
-
60
ns
VDD = 15V
1, 2, 3
+25
o
C
-
40
ns
Maximum Clock Input
Rise or Fall Time
TRCL
TFCL
VDD = 5V
1, 2, 3
+25
o
C
-
15
μ
s
VDD = 10V
1, 2, 3
+25
o
C
-
5
μ
s
VDD = 15V
1, 2, 3
+25
o
C
-
5
μ
s
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
7.5
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
1, 4
+25
o
C
-2.8
-0.2
V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
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