參數(shù)資料
型號： CD4049UBMS
廠商： Intersil Corporation
英文描述： CMOS Hex Buffer/Converter(CMOS 六緩沖器/轉(zhuǎn)換器)
中文描述： 的CMOS六角緩沖/轉(zhuǎn)換器的CMOS（六緩沖器/轉(zhuǎn)換器）
文件頁數(shù)： 4/7頁
文件大?。?/td> 75K
代理商： CD4049UBMS
4
Propagation Delay
TPHL
VIN = 10V, VDD = 5V
1, 2, 3
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
30
ns
VIN = 10V, VDD = 10V
1, 2, 3
-
40
ns
Propagation Delay
TPLH
VIN = 10V, VDD = 5V
1, 2, 3
-
90
ns
VIN = 10V, VDD = 10V
1, 2, 3
-
65
ns
Propagation Delay
TPHL
VIN = 15V, VDD = 5V
1, 2, 3
-
20
ns
VIN = 15V, VDD = 15V
1, 2, 3
-
30
ns
Propagation Delay
TPLH
VIN = 15V, VDD = 5V
1, 2, 3
-
90
ns
VIN = 15V, VDD = 15V
1, 2, 3
-
50
ns
Transition Time
TTHL
VDD = 10V, VIN = VDD OR GND
1, 2, 3
-
40
ns
VDD = 15V, VIN = VDD OR GND
1, 2, 3
-
30
ns
Transition Time
TTLH
VDD = 10V, VIN = VDD OR GND
1, 2, 3
-
80
ns
VDD = 15V, VIN = VDD OR GND
1, 2, 3
-
60
ns
Input Capacitance
CIN
Any Input
1, 2
-
22.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
-
7.5
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
VDD = 10V, ISS = -10
μ
A
1, 4
-2.8
-0.2
V
N Threshold Voltage
Delta
VTND
1, 4
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
μ
A
VSS = 0V, IDD = 10
μ
A
1, 4
+25
o
C
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTPD
1, 4
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
±
0.2
μ
A
±
20% x Pre-Test Reading
±
20% x Pre-Test Reading
Output Current (Sink)
IOL5
Output Current (Source)
IOH5A
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CD4049UBMS
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