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參數(shù)資料
| 型號： | CD2383Y |
| 英文描述： | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進步黨| 160V五（巴西）總裁| 1A條一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 217K |
| 代理商： | CD2383Y |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN COMPLEMENTARY SILICON TRANSISTSOR
CD2383
TO-92
Plastic Package
Vertical Deflection Output and Class B Sound Output Applications of Color T.V
ABSOLUTE MAXIMUM RATINGS ( Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current Continuous
Power Dissipation
Operating And Storage Junction
Temperature Range
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
160
160
6
1
500
700
V
V
V
A
mA
mW
ELECTRICAL CHARACTERISTICS ( Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
Collector Emitter Breakdown Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
BV
CEO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
*
V
BE(on)
*
I
C
=10mA,I
B
=0
V
CB
=150V, I
E
= 0
V
BE
=6V, I
C
= 0
V
CE
=5V,I
C
=200mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=5mA
160
V
μ
A
μ
A
1
1
60
320
1.5
0.75
V
V
0.45
DYNAMIC CHARACTERISTICS
Gain Bandwith Product
f
T
I
C
=200mA, V
CE
=5V
20
100
MHz
Output Capacitance
C
ob
I
C
=0, V
CB
=10V
f=1MHz
20
pF
*Pulse Condition: Width < 300
m
s, Duty Cycle < 2%.
CLASSIFICATION
hFE
R O Y
60-120 100-200 160-320
VALUE
UNIT
T
j
, T
stg
-55 to +150
oC
IS/ISO 9002
Lic# QSC/L- 000019.2
ECB
Continental Device India Limited
Data Sheet
Page 1 of 3
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