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參數(shù)資料
| 型號： | CD22859E |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Monolithic Silicon COS/MOS Dual-Tone Multifrequency Tone Generator |
| 中文描述： | TELEPHONE DIALER CKT, PDIP16 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 38K |
| 代理商： | CD22859E |
4-128
STATIC MUTE OUTPUT CURRENT
Transmitter
1.7
1.2
-0.5
-
mA
I
OH
(Source)
10
9.5
-3.4
-
mA
I
OL
(Sink)
10
2.5
-
10
μ
A
Receiver
1.7
1.2
-0.5
-
mA
I
OH
(Source)
10
9.5
-3.4
-
mA
I
OL
(Sink)
10
2.5
-
10
μ
A
NOTES:
1. All logic and counters functional.
2. Mute switches remain open.
3. Two or more row inputs low and one column input low.
4. Two or more column inputs low and one row input low.
5. Distortion is defined as: The ratio of all extraneous frequency components generated in the voiceband 0.5kHz to 3kHz, to the power of the dual-
tone signal, measure across R
L
.
where V
1
, V
2
. . . . V
n
are extraneous frequency components in the voiceband 0.5kHz to 3kHz, V
L
is the low-band frequency tone, and V
H
is
the high-band frequency tone.
6. Tone rise time is defined as the time for each of the 2 DTMF frequencies to attain 90% of full amplitude, measured from the time when a row
and column signal are driven low.
7. Pre-emphasis is the ratio of the high-group level to the low-group level.
8. Refer to Figure 1 for standard DTMF frequencies.
9. Corresponds to normal dual-tone operation.
10. Corresponds to single-tone generation mode.
Electrical Specifications
T
A
= -25
o
C to 60
o
C
(Continued)
PARAMETER
V
DD
(V)
V
O
(V)
MIN
MAX
UNITS
Distortion=
V
2
V
2
V
L
2
+
+
)
V
H
2
+
-------------------+
,
CD22859
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