參數(shù)資料
型號(hào): CD22103AD
廠商: INTERSIL CORP
元件分類: 數(shù)字傳輸電路
英文描述: CMOS HDB3 High Density Bipolar 3 Transcoder for 2.048/8.448Mb/s Transmission Applications
中文描述: DATACOM, HDB3 ENCODER/DECODER, CDIP16
封裝: SIDE BRAZED, DIP-16
文件頁(yè)數(shù): 2/7頁(yè)
文件大小: 47K
代理商: CD22103AD
69
Absolute Maximum Ratings
Thermal Information
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .175
o
C
Maximum Junction Temperature (Plastic Package). . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . .-65
o
C
T
A
150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
Supply Voltage (V
DD
)
(Voltages referenced to V
SS
Terminal) . . . . . . . . . . . . . -0.5 to 8V
Supply Voltage Range
For T
A
= Full Package Temperature Range. . . . . . . . . . . . 4.5V to 5.5V
Input Voltage (All Inputs) . . . . . . . . . . . . . . . . . . . -0.5 to V
DD
+0.5V
Input Current (Any One Input)
. . . . . . . . . . . . . . . . . . . . . . . . . . .±
10mA
Power Dissipation
For T
A
= -40
o
C to 60
o
C (Package Type E). . . . . . . . . . . . .500mW
For T
A
= 60
o
C to 85
o
C
(Package Type E). . . . . . . . Derate Linearly 12mW/
o
C to 200mW
For T
A
= -55
o
C to 100
o
C (Package Type D). . . . . . . . . . . .500mW
For T
A
= 100
o
C to 125
o
C
(Package Type D). . . . . . . . Derate Linearly 12mW/
o
C to 200mW
Device Dissipation per Output Transistor
For T
A
= Full Package Temperature Range (All Types) . . . . . 100mW
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Temperature Range
Package Type D . . . . . . . . . . . . . . . . . . . . . . .-55
o
C
T
A
125
o
C
Package Type E . . . . . . . . . . . . . . . . . . . . . . . .-40
o
C
T
A
85
o
C
Electrical Specifications
V
DD
= 5V
±
10%, T
A
= 25
o
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
STATIC SPECIFICATIONS
Quiescent Device Current
I
DD
-
-
100
μ
A
Operating Device Current
f
CL
= 10MHz
-
-
8
mA
HDB3 Output Low (Sink) Current
I
OL1
V
OL
= 0.5V
1.6
-
-
mA
HDB3 Output High (Source) Current
I
OH1
V
OH
= 2.8V
-10
-
-
mA
All Other Outputs Low (Sink) Current
I
OL2
V
OL
= 0.5V
1.6
-
-
mA
All Other Outputs High (Source) Current
I
OH2
V
OH
= 2.8V
-1.6
-
-
mA
Input Low Current
I
IL
-
-
-1
μ
A
Input High Current
I
IH
-
-
1
μ
A
Input Low Voltage
V
IL
-
-
0.8
V
Input High Voltage
V
IH
2
-
-
V
Input Capacitance
I
IN
-
-
5
pF
Electrical Specifications
T
A
= -40
o
C to 85
o
C for Plastic Package; -55
o
C to 125
o
C for Ceramic Package; V
DD
= 4.5V to 5.5V;
C
L
= 15pF
PARAMETER
SYMBOL
FIGURE
MIN
TYP
MAX
UNITS
DYNAMIC INPUT
CTX, CRX Input Frequency
f
CTX
, f
CRX
0.05
-
10
MHz
CTX, CRX Input Rise Time
t
RCL
3
-
-
1
μ
s
Fall Time
t
FCL
3
-
-
1
μ
s
NRZ-IN to CTX
Data Setup Time
t
S
3
15
-
-
ns
Data Hold Time
t
H
3
15
-
-
ns
HDB3 IN to CRX
Data Setup Time
t
S
4
15
-
-
ns
Data Hold Time
t
H
3
0
-
-
ns
CD22103A
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