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參數(shù)資料
| 型號： | CD214C-R3800 |
| 廠商： | BOURNS INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CD214C-R350~R31000 Glass Passivated Rectifiers |
| 中文描述： | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 310K |
| 代理商： | CD214C-R3800 |
CD214C-R350~R31000 Glass Passivated Rectifiers
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Features
■
Lead free device (RoHS compliant*)
■
Glass passivated chip
■
Low reverse leakage current
■
Low forward voltage drop
■
High current capability
General Information
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip
DO-214AB (SMC) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Glass Passivated
Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.
Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD214C-
R3400
Unit
R350
R3100
R3200
R3600
R3800
R31000
Maximum Repetitive
Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
VDC
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
50
100
200
400
600
800
1000
V
Maximum Average Forward
Rectified Current (@ TL= 100 °C)
1
DC Reverse Current @ Rated DC
Blocking Voltage (@TJ= 25 °C)
DC Reverse Current @ Rated DC
Blocking Voltage (@TJ= 125 °C)
Typical Junction Capacitance
2
I(AV)
3.0
A
IR
10.0
μA
IR
250.0
μA
CJ
40
pF
Maximum Instantaneous
Forward Voltage @ 3 A
VF
1.15
V
Typical Thermal Resistance
3
R
θ
JA
10
°C/W
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
100
A
Notes:
1 See Forward Derating Curve.
2 Measured at 1 MHz and an applied reverse voltage of 4.0 V.
3 Thermal resistance from junction to lead.
Parameter
Symbol
CD214C-R350~R31000
Unit
Operating Temperature Range
T
J
-65 to +175
°C
Storage Temperature Range
T
STG
-65 to +175
°C
*RHSCOMPIAN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CD214C-S3D | 功能描述:DIO RECT VRRM 200V 3A SMC 制造商:bourns inc. 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:3,000 |
| CD214C-S3G | 功能描述:DIO RECT VRRM 400V 3A SMC 制造商:bourns inc. 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:3,000 |
| CD214C-S3J | 功能描述:DIO RECT VRRM 600V 3A SMC 制造商:bourns inc. 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:3,000 |
| CD214C-S3K | 功能描述:DIO RECT VRRM 800V 3A SMC 制造商:bourns inc. 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:3,000 |
| CD214C-S3M | 功能描述:DIO RECT VRRM 1000V 3A SMC 制造商:bourns inc. 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:3,000 |
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