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參數(shù)資料
| 型號： | CD13005F |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON POWER TRANSISTOR |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 157K |
| 代理商： | CD13005F |
NPN SILICON POWER TRANSISTOR
CD13005
TO-220
Plastic Package
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ T
a
=25 oC
Derate Above 25oC
Power Dissipation @ T
c
=25 oC
Derate Above 25oC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
j,
T
stg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
R
th (j-c)
R
th (j-a)
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Collector Cut Off Current
SYMBOL
V
CBO
*V
CEO(sus)
I
CBO
TEST CONDITION
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
V
CB
=600V
,
I
E
=0
V
CB
=600V
,
I
E
=0, T
c
=100oC
V
EB
=9V, I
C
=0
MIN
600
400
-
TYP
-
-
-
MAX
-
-
1.0
5.0
1.0
UNIT
V
V
mA
mA
mA
Emitter Cut Off Current
I
EBO
-
-
*Pulse Test:- PW=300
m
s, Duty Cycle=2%
CD13005Rev_3 260404E
275
oC
T
L
UNIT
V
V
V
A
A
A
A
W
A
A
oC
oC/W
oC/W
VALUE
600
400
9.0
2.0
4.0
0.75
1.5
2.25
4.5
1.4
11.2
60
480
- 65 to+150
2.08
89
mW/ oC
W
mW/ oC
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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