參數(shù)資料
型號(hào): CD13002
廠(chǎng)商: Electronic Theatre Controls, Inc.
英文描述: NPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR
中文描述: NPN硅平面外延,高壓快速開(kāi)關(guān)功率晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 156K
代理商: CD13002
NPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE
FAST SWITCHING POWER TRANSISTOR
CD13002
TO-92
Plastic Package
Compact Fluorescent Lamps (CFLS)
ABSOLUTE MAXIMUM RATING (T
a
=25oC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
VALUE
600
400
9.0
1.0
1.5
1.0
T
j
, T
stg
- 55 to +150
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
TEST CONDITION
I
C
=1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=600V, I
E
= 0
V
CE
=400V, I
B
= 0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=0.1A
V
CE
=5V, I
C
=400mA
I
C
=100mA, I
B
=50mA
I
C
=230mA, I
B
=50mA
I
C
=100mA, I
B
=50mA
I
C
=0.11A
I
C
=0.1A, I
B1
= I
B2
=0.05A
V
CE
=10V, I
C
=0.1A,f=1MHz
MIN
600
400
9.0
TYP
MAX
UNIT
V
V
V
μ
A
μ
A
μ
A
100
50
100
23
20
0.11
0.24
0.88
0.4
0.9
15
5.0
0.05
0.12
0.82
Collector Emitter Saturation Voltage
V
CE (sat)
V
V
V
μ
s
μ
s
Base Emitter Saturation Voltage
Fall Time
Storage Time
Transition Frequency
V
BE (sat)
t
f
t
s
f
T
0.07
4.0
MHz
MARKING
CD
13002
CD13002Rev_1 210803E
UNIT
V
V
V
A
A
W
oC
ECB
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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