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參數資料
| 型號： | CC5551 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR |
| 中文描述： | npn型互補性的芯片高壓晶體管 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 50K |
| 代理商： | CC5551 |
NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR
CC5551
(9AW)
TO-92
BCE
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
CC5551
DESCRIPTION
Dynamic Characteristics
Small Signal Current Gain
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNIT
h
fe
I
C
=1mA, V
CE
=10V
f=1KHz
V
CE
=10V,I
C
f=100MHz
V
CB
=10V, I
E
=0
f=1MHz
V
EB
=0.5V, I
C
=0
f=1MHz
V
CE
=5V, I
C
=250
μ
A
R
S
=1k
, f=10Hz to
15.7kHz
80
-
320
Transition Frequency
f
t
100
-
300
MHz
Output Capacitance
C
ob
-
-
6.0
pF
Input Capacitance
C
ib
-
-
20
pF
Noise Figure
N
F
-
-
8.0
dB
*Pulse Test: Pulse Width=300us, Duty Cycle=2%
Continental Device India Limited
Data Sheet
Page 2 of 4
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