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參數(shù)資料
| 型號(hào)： | CAT660ESA |
| 英文描述： | 100mA CMOS Charge Pump Inverter/Doubler |
| 中文描述： | 100mA的CMOS電荷泵逆變器/倍增 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 497K |
| 代理商： | CAT660ESA |
CAT660
3
Doc. No. 5000, Rev. U
ABSOLUTE MAXIMUM RATINGS
V+ to GND .............................................................6V
Input Voltage (Pins 1, 6 and 7) ..-0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Continuous Power Dissipation (T
A
= 70
°
C)
Plastic DIP................................................730mW
SOIC.........................................................500mW
TDFN...............................................................1W
Operating Ambient Temperature Range
CAT660E.............. -40
°
C to 85
°
C
Storage Temperature.........................-65
°
C to 160
°
C
Lead Soldering Temperature (10 sec)............. 300
°
C
Note: T
A
= Ambient Temperature
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
Parameter
Symbol
Conditions
Inverter: LV = Open. R
L
= 1k
Inverter: LV = GND. R
L
= 1k
Doubler: LV = OUT. R
L
= 1k
BOOST/FC = open, LV = Open
Min
Typ
Max
Units
3.0
1.5
2.5
5.5
5.5
5.5
V
Supply Voltage
VS
Supply Current
IS
0.09
0.5
mA
BOOST/FC = V+ , LV = Open
0.3
3
Output Current
IOUT
OUT is more negative than -4V
I
L
= 100mA, C1 = C2 = 150
μ
F (Note 2)
BOOST/FC = V+ (C1, C2 ESR
≤
0.5
)
I
L
= 100mA, C1 = C2 = 10
μ
F
BOOST/FC = Open
BOOST/FC = V+
100
mA
Output Resistance
RO
4
7
12
Oscillator Frequency FOSC
(Note 3)
5
10
80
±
1
±
5
98
kHz
40
OSC Input Current
IOSC
BOOST/FC = Open
BOOST/FC = V+
R
L
= 1k
connected between V+ and
OUT, T
A
= 25
°
C (Doubler)
R
L
= 500
connected between GND and
OUT, T
A
= 25
°
C (Inverter)
I
L
= 100mA to GND, T
A
= 25
°
C (Inverter)
No load, T
A
= 25
°
C
μ
A
Power Efficiency
PE
96
%
92
96
88
Voltage Conversion
Efficiency
VEFF
99
99.9
%
Note 1. In Figure 1, test circuit capacitors C1 and C2 are 150
μ
F and have 0.2
maximum ESR. Higher ESR levels may reduce efficiency and output
voltage.
Note 2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency
keep external capacitor ESR under 0.2
.
Note 3. FOSC is tested with C
OSC
= 100pF to minimize test fixture loading. The test is correlated back to C
OSC
=0pF to simulate the capacitance
at OSC when the device is inserted into a test socket without an external C
OSC
.
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 150
μ
F, Boost/FC = Open, C
OSC
= 0pF, inverter mode with test circuit as shown in Figure 1 unless
otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.
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| CAT660ESA-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:100mA CMOS Charge Pump Inverter/Doubler |
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| CAT660EVA-T3 | 功能描述:電荷泵 Charge pump voltage converter RoHS:否 制造商:Maxim Integrated 功能:Inverting, Step Up 輸出電壓:- 1.5 V to - 5.5 V, 3 V to 11 V 輸出電流:100 mA 電源電流:1 mA 最大工作溫度:+ 70 C 封裝 / 箱體:SOIC-8 Narrow 封裝:Tube |
| CAT660EVA-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:100mA CMOS Charge Pump Inverter/Doubler |
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