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參數(shù)資料
| 型號： | CAT5132ZI-10-G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC POT DGTL 10K 128-TAP 10MSOP |
| 標(biāo)準(zhǔn)包裝： | 96 |
| 接片： | 128 |
| 電阻（歐姆）： | 10k |
| 電路數(shù)： | 1 |
| 溫度系數(shù)： | 標(biāo)準(zhǔn)值 300 ppm/°C |
| 存儲器類型： | 非易失 |
| 接口： | I²C（設(shè)備位址） |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 10-TFSOP，10-MSOP（0.118"，3.00mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 10-MSOP |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 806 (CN2011-ZH PDF) |
CAT5132
http://onsemi.com
3
Table 4. POTENTIOMETER CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Limits
Units
Min
Typ
Max
RPOT
Potentiometer Resistance (100 kW)
100
kW
RPOT
Potentiometer Resistance (50 kW)
50
kW
RPOT
Potentiometer Resistance (10 kW)
10
kW
RTOL
Potentiometer Resistance Tolerance
20
%
Power Rating
25C
50
mW
IW
Wiper Current
3
mA
RW
Wiper Resistance
IW = 1 mA @ V+ = 12 V
70
150
W
IW = 1 mA @ V+ = 8 V
110
200
W
VTERM
Voltage on RW, RH or RL
GND = 0 V; V+ = 8 V to 16 V
GND
V+
V
RES
Resolution
0.78
%
ALIN
Absolute Linearity (Note 6)
1
LSB
(Note 8)
RLIN
Relative Linearity (Note 7)
0.5
LSB
(Note 8)
TCRPOT Temperature Coefficient of RPOT
(Note 5)
300
ppm/C
TCRatio
Ratiometric Temperature Coefficient
(Note 5)
30
ppm/C
CH/CL/CW Potentiometer Capacitances
(Note 5)
10/10/25
pF
fc
Frequency Response
RPOT = 50 kW
0.4
MHz
5. This parameter is tested initially and after a design or process change that affects the parameter.
6. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
potentiometer.
7. Relative linearity is utilized to determine the actual change in voltage between two successive tap positions when used as a potentiometer.
8. LSB = (RHM RLM)/127; where RHM and RLM are the highest and lowest measured values on the wiper terminal.
9. n = 1, 2, ..., 127
10.V+ @ RH; 0 V @ RL; VW measured @ RW with no load.
Table 5. D.C. ELECTRICAL CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC1
Power Supply Current
(Volatile Write/Read)
FSCL = 400 kHz, SDA Open,
VCC = 5.5 V, Input = GND
1
mA
ICC2
Power Supply Current
(Nonvolatile WRITE)
FSCL = 400 kHz, SDA Open,
VCC = 5.5 V, Input = GND
3.0
mA
ISB(VCC) Standby Current (VCC = 5 V)
VIN = GND or VCC, SDA = VCC
5
mA
ISB(V+)
V+ Standby Current
VCC = 5 V, V+ = 16 V
10
mA
ILI
Input Leakage Current
VIN = GND to VCC
10
mA
ILO
Output Leakage Current
VOUT = GND to VCC
10
mA
VIL
Input Low Voltage
1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 1.0
V
VOL1
Output Low Voltage (VCC = 3.0)
IOL = 3 mA
0.4
V
Table 6. CAPACITANCE (TA = 25C, f = 1.0 MHz, VCC = 5.0 V)
Symbol
Parameter
Test Conditions
Min
Max
Units
CI/O
Input/Output Capacitance (SDA)
8
pF
CIN
Input Capacitance (A0, A1, SCL)
6
pF
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