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參數(shù)資料
| 型號： | CAT5112VI-10-T3 |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC POT DIGITL 10K 32TAP 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | DPP |
| 接片： | 32 |
| 電阻（歐姆）： | 10k |
| 電路數(shù)： | 1 |
| 溫度系數(shù)： | 標(biāo)準(zhǔn)值 300 ppm/°C |
| 存儲器類型： | 非易失 |
| 接口： | 3 線串行（芯片選擇，遞增，增/減） |
| 電源電壓： | 2.5 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOIC |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 產(chǎn)品目錄頁面： | 805 (CN2011-ZH PDF) |
| 其它名稱： | CAT5112VI-10-T3DKR CAT5112VI-10-TE13DKR CAT5112VI-10-TE13DKR-ND |
CAT5112
http://onsemi.com
3
Table 1. OPERATION MODES
INC
CS
U/D
Operation
High to Low
Low
High
Wiper toward RH
High to Low
Low
Wiper toward RL
High
Low to High
X
Store Wiper Position
Low
Low to High
X
No Store, Return to Standby
X
High
X
Standby
Figure 3. Potentiometer Equivalent Circuit
CW
RL
CL
CH
RWB
RWI
RH
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Supply Voltage
VCC to GND
0.5 to +7
V
Inputs
CS to GND
0.5 to VCC +0.5
V
INC to GND
0.5 to VCC +0.5
V
U/D to GND
0.5 to VCC +0.5
V
RH to GND
0.5 to VCC +0.5
V
RL to GND
0.5 to VCC +0.5
V
RWB to GND
0.5 to VCC +0.5
V
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix)
0 to 70
C
Industrial (‘I’ suffix)
40 to +85
C
Junction Temperature
+150
C
Storage Temperature
65 to +150
C
Lead Soldering (10 s max)
+300
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Test Method
Min
Typ
Max
Units
ESD Susceptibility
MILSTD883, Test Method 3015
2000
V
Latch-Up
JEDEC Standard 17
100
mA
TDR
Data Retention
MILSTD883, Test Method 1008
100
Years
NEND
Endurance
MILSTD883, Test Method 1003
1,000,000
Stores
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1 V to VCC + 1 V
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